elektronische bauelemente 2sd1815 3a , 120v npn epitaxial planar silicon transistor 25-feb-2014 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? a c d h g e f k b j p m rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low collector-to-emitter saturation voltage ? excllent linearity of hfe ? high ft ? fast switching time classification of h fe product-rank 2sd1815-q 2SD1815-R 2sd1815-s range 70~140 100~200 140~280 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 120 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 6 v collector current -continuous i c 3 a collector power dissipation p c 1 w junction temperature t j 150 storage temperature t stg -55 ~ 150 electrical characteristics (t a = 25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v ( br ) cbo 120 - - v i c =10 a, i e =0 collector-emitter breakdown voltage v (br)ceo 100 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 6 - - v i e =10 a, i c =0 collector cut-off current i cbo - - 1 a v cb =100v, i e =0 emitter cut-off current i ebo - - 1 a v eb =4v, i c =0 70 - 280 v ce =5v, i c =500ma dc current gain h fe 40 - - v ce =5v, i c =2a collector-emitter sa turation voltage v ce(sat) - - 0.4 v i c =1.5a, i b =150ma base -emitter satu ration voltage v be(sat) - - 1.2 v i c =1.5a, i b =150ma transition frequency f t - 180 - mhz v ce =10v, i c =500ma collector output capacitance c ob - 25 - pf v cb =10v, i e =0, f=1mhz turn-on time t on - 100 - storage time t s - 900 - fall time t f - 50 - ns v cc =50v, i c =1.5a, i b1 = -i b2 = -0.15a to-251 millimete r millimete r ref. min. max. ref. min. max. a 6.35 6.80 g 5.40 6.25 b 4.90 5.50 h 0.85 1.50 c 2.15 2.40 j 2.30 d 0.43 0.90 k 0.60 1.05 e 6.50 7.50 m 0.50 0.90 f 7.20 9.65 p 0.43 0.62
elektronische bauelemente 2sd1815 3a , 120v npn epitaxial planar silicon transistor 25-feb-2014 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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